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GD20FSX65L2S Datasheet(PDF) 4 Page - StarPower Europe AG

Part # GD20FSX65L2S
Description  650V/20A 6 in one-package
PDF  9 Pages
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Manufacturer  STARPOWER [StarPower Europe AG]
Direct Link  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD20FSX65L2S Datasheet(HTML) 4 Page - StarPower Europe AG

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GD20FSX65L2S
IGBT Module
©2020 STARPOWER Semiconductor Ltd.
6/22/2020
4/9
Preliminary
Diode Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VF
Diode Forward
Voltage
IC=20A,VGE=0V,Tj=25
oC
1.60
2.05
V
IC=20A,VGE=0V,Tj=125
oC
1.55
IC=20A,VGE=0V,Tj=150
oC
1.50
Qr
Recovered Charge
VR=300V,IF=20A,
-di/dt=1800A/μs,VGE=-15V
Tj=25
oC
1.00
μC
IRM
Peak Reverse
Recovery Current
30.0
A
Erec
Reverse Recovery
Energy
0.21
mJ
Qr
Recovered Charge
VR=300V,IF=20A,
-di/dt=1800A/μs,VGE=-15V
Tj=125
oC
1.75
μC
IRM
Peak Reverse
Recovery Current
32.0
A
Erec
Reverse Recovery
Energy
0.37
mJ
Qr
Recovered Charge
VR=300V,IF=20A,
-di/dt=1800A/μs,VGE=-15V
Tj=150
oC
2.20
μC
IRM
Peak Reverse
Recovery Current
34.0
A
Erec
Reverse Recovery
Energy
0.47
mJ
NTC Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R25
Rated Resistance
5.0
kΩ
∆R/R
Deviation of R100
TC=100
oC,R100=493.3Ω
-5
5
%
P25
Power
Dissipation
20.0
mW
B25/50
B-value
R2=R25exp[B25/50(1/T2-
1/(298.15K))]
3375
K
B25/80
B-value
R2=R25exp[B25/80(1/T2-
1/(298.15K))]
3411
K
B25/100
B-value
R2=R25exp[B25/100(1/T2-
1/(298.15K))]
3433
K
Module Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
LCE
Stray Inductance
25
nH
RCC’+EE’
Module Lead Resistance,Terminal to Chip
4.50
mΩ
RthJC
Junction-to-Case (per IGBT-inverter)
Junction-to-Case (per Diode-inverter)
1.055
1.687
1.160
1.856
K/W
RthCH
Case-to-Sink (per IGBT-inverter)
Case-to-Sink (per Diode-inverter)
Case-to-Sink (per Module)
0.566
0.905
0.058
K/W
F
Mounting Force Per Clamp
20
50
N
G
Weight of Module
24
g



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