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GD20FSX65L4SN Datasheet(PDF) 4 Page - StarPower Europe AG |
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GD20FSX65L4SN Datasheet(HTML) 4 Page - StarPower Europe AG |
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4 / 9 page ![]() GD20FSX65L4SN IGBT Module ©2024 STARPOWER Semiconductor Ltd. 1/17/2024 4/9 B01 Diode Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward Voltage IF=20A,VGE=0V,Tvj=25 oC 1.60 2.05 V IF=20A,VGE=0V,Tvj=125 oC 1.65 IF=20A,VGE=0V,Tvj=150 oC 1.65 Qr Recovered Charge VR=300V,IF=20A, -di/dt=1395A/μs,VGE=-15V, Ls=45nH,Tvj=25 oC 0.55 μC IRM Peak Reverse Recovery Current 17 A Erec Reverse Recovery Energy 0.09 mJ Qr Recovered Charge VR=300V,IF=20A, -di/dt=1196A/μs,VGE=-15V, Ls=45nH,Tvj=125 oC 0.88 μC IRM Peak Reverse Recovery Current 18 A Erec Reverse Recovery Energy 0.16 mJ Qr Recovered Charge VR=300V,IF=20A, -di/dt=1164A/μs,VGE=-15V, Ls=45nH,Tvj=150 oC 0.98 μC IRM Peak Reverse Recovery Current 18 A Erec Reverse Recovery Energy 0.18 mJ NTC Characteristics T F=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R25 Rated Resistance 5.0 kΩ ∆R/R Deviation of R100 Tvj =100 oC,R100=493.3Ω -5 5 % P25 Power Dissipation 20.0 mW B25/50 B-value R2=R25exp[B25/50(1/T2- 1/(298.15K))] 3375 K B25/80 B-value R2=R25exp[B25/80(1/T2- 1/(298.15K))] 3411 K B25/100 B-value R2=R25exp[B25/100(1/T2- 1/(298.15K))] 3433 K Module Characteristics T C=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit LCE Stray Inductance 25 nH RCC’+EE’ Module Lead Resistance,Terminal to Chip 9.50 mΩ RthJC Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) 1.263 1.899 1.389 2.089 K/W RthCH Case-to-Heatsink (per IGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Module) 0.769 1.157 0.077 K/W F Mounting Force Per Clamp 30 50 N G Weight of Module 10 g |
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