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GD35FSX120L2S Datasheet(PDF) 4 Page - StarPower Europe AG

Part # GD35FSX120L2S
Description  1200V/35A 6 in one-package
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STARPOWER [StarPower Europe AG]
Direct Link  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD35FSX120L2S Datasheet(HTML) 4 Page - StarPower Europe AG

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GD35FSX120L2S
IGBT Module
©2020 STARPOWER Semiconductor Ltd.
8/5/2020
4/9
A02
Diode Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VF
Diode Forward
Voltage
IF=35A,VGE=0V,Tj=25
oC
1.85
2.30
V
IF=35A,VGE=0V,Tj=125
oC
1.90
IF=35A,VGE=0V,Tj=150
oC
1.95
Qr
Recovered Charge
VR=600V,IF=35A,
-di/dt=2500A/μs,VGE=-15V
Tj=25
oC
4.5
μC
IRM
Peak Reverse
Recovery Current
93
A
Erec
Reverse Recovery
Energy
1.47
mJ
Qr
Recovered Charge
VR=600V,IF=35A,
-di/dt=2500A/μs,VGE=-15V
Tj=125
oC
7.8
μC
IRM
Peak Reverse
Recovery Current
98
A
Erec
Reverse Recovery
Energy
2.65
mJ
Qr
Recovered Charge
VR=600V,IF=35A,
-di/dt=2500A/μs,VGE=-15V
Tj=150
oC
8.6
μC
IRM
Peak Reverse
Recovery Current
101
A
Erec
Reverse Recovery
Energy
2.89
mJ
NTC Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R25
Rated Resistance
5.0
kΩ
∆R/R
Deviation of R100
TC=100
oC,R100=493.3Ω
-5
5
%
P25
Power
Dissipation
20.0
mW
B25/50
B-value
R2=R25exp[B25/50(1/T2-
1/(298.15K))]
3375
K
B25/80
B-value
R2=R25exp[B25/80(1/T2-
1/(298.15K))]
3411
K
B25/100
B-value
R2=R25exp[B25/100(1/T2-
1/(298.15K))]
3433
K
Module Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
LCE
Stray Inductance
25
nH
RCC’+EE’
Module Lead Resistance,Terminal to Chip
4.50
mΩ
RthJC
Junction-to-Case (per IGBT-inverter)
Junction-to-Case (per Diode-inverter)
0.426
0.671
0.469
0.738
K/W
RthCH
Case-to-Sink (per IGBT-inverter)
Case-to-Sink (per Diode-inverter)
Case-to-Sink (per Module)
0.569
0.896
0.058
K/W
F
Mounting Force Per Clamp
20
50
N
G
Weight of Module
24
g



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