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GD200FFX65C6SF Datasheet(PDF) 4 Page - StarPower Europe AG

Part # GD200FFX65C6SF
Description  650V/200A 6 in one-package
PDF  9 Pages
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Manufacturer  STARPOWER [StarPower Europe AG]
Direct Link  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD200FFX65C6SF Datasheet(HTML) 4 Page - StarPower Europe AG

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GD200FFX65C6SF
IGBT Module
©2020 STARPOWER Semiconductor Ltd.
7/15/2020
4/9
Preliminary
Diode Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VF
Diode Forward
Voltage
IF=200A,VGE=0V,Tj=25
oC
1.55
2.00
V
IF=200A,VGE=0V,Tj=125
oC
1.50
IF=200A,VGE=0V,Tj=150
oC
1.45
Qr
Recovered Charge
VR=300V,IF=200A,
-di/dt=5700A/μs,VGE=-15V
Tj=25
oC
10.0
μC
IRM
Peak Reverse
Recovery Current
160
A
Erec
Reverse Recovery
Energy
3.00
mJ
Qr
Recovered Charge
VR=300V,IF=200A,
-di/dt=5700A/μs,VGE=-15V
Tj=125
oC
17.0
μC
IRM
Peak Reverse
Recovery Current
230
A
Erec
Reverse Recovery
Energy
5.20
mJ
Qr
Recovered Charge
VR=300V,IF=200A,
-di/dt=5700A/μs,VGE=-15V
Tj=150
oC
20.0
μC
IRM
Peak Reverse
Recovery Current
240
A
Erec
Reverse Recovery
Energy
5.80
mJ
NTC Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R25
Rated Resistance
5.0
kΩ
∆R/R
Deviation of R100
TC=100
oC,R100=493.3Ω
-5
5
%
P25
Power
Dissipation
20.0
mW
B25/50
B-value
R2=R25exp[B25/50(1/T2-
1/(298.15K))]
3375
K
B25/80
B-value
R2=R25exp[B25/80(1/T2-
1/(298.15K))]
3411
K
B25/100
B-value
R2=R25exp[B25/100(1/T2-
1/(298.15K))]
3433
K
Module Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
LCE
Stray Inductance
21
nH
RCC’+EE’
Module Lead Resistance,Terminal to Chip
1.80
mΩ
RthJC
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
0.247
0.445
K/W
RthCH
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
0.084
0.151
0.009
K/W
M
Mounting Screw:M5
3.0
6.0
N.m
G
Weight of Module
300
g



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