BAV102 datasheet(4/10 Pages) NXP

4 / 10 page

BAV102_BAV103_3

Product data sheet

Rev. 03 — 16 August 2007

4 of 10

NXP Semiconductors

BAV102; BAV103

Single general-purpose switching diodes

(1) Tamb = 150 °C; typical values

(2) Tamb =25 °C; typical values

(3) Tamb =25 °C; maximum values

Based on square wave currents.

Tj =25 °C; prior to surge

Fig 1.

Forward current as a function of forward

voltage

Fig 2.

Non-repetitive peak forward current as a

function of pulse duration; maximum values

VR =VRmax

Solid line: maximum values

Dotted line: typical values

f = 1 MHz; Tamb =25 °C

Fig 3.

Reverse current as a function of junction

temperature

Fig 4.

Diode capacitance as a function of reverse

voltage; typical values

mbg459

012

600

200

400

VF (V)

(mA)

(1)

(2)

(3)

mbg703

102

IFSM

(A)

10−1

tp (µs)

1104

103

102

mgd009

100

Tj (°C)

200

103

102

10−1

10−2

(

µA)

mgd005

010

1.6

1.4

1.0

0.8

1.2

VR (V)

(pF)

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