BFG520WSLASHX datasheet(7/15 Pages) NXP

7 / 15 page

NXP Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistors

BFG520W; BFG520W/X

Fig.10 Intermodulation distortion as a function

of collector current; typical values.

Vo = 275 mV; fp +fq − fr = 793.25 MHz; VCE =6V;

RL =75 Ω; Tamb =25 °C.

handbook, halfpage

MLB818

(dB)

010

d im

(mA)

Fig.11 Second order intermodulation distortion as a

function of collector current; typical values.

Vo = 75 mV; fp +fq = 810 MHz; VCE =6V;

RL =75 Ω Tamb =25 °C.

handbook, halfpage

MLB819

(dB)

010

d 2

(mA)

Fig.12 Minimum noise figure as a function

of collector current; typical values.

VCE =6V.

handbook, halfpage

MLB820

(dB)

(mA)

1000 MHz

f = 2000 MHz

500 MHz

900 MHz

Fig.13 Associated available gain as a function

of collector current; typical values.

VCE =6V.

handbook, halfpage

MLB821

(dB)

(mA)

ass

f = 900 MHz

1000 MHz

2000 MHz

Rev. 04 - 21 November 2007

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