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TPCF8301 Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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TPCF8301 Datasheet(HTML) 6 Page - Toshiba Semiconductor |
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6 / 7 page ![]() TPCF8301 2006-11-16 6 Pulse width tw (s) rth – tw Drain-source voltage VDS (V) Safe operating area 1 1 m 10 m 100 m 1 10 100 1000 10 100 1000 Device mounted on a glass-epoxy board (a) (1) Single-device operation (2) Single-device value at dual operation Device mounted on a glass-epoxy board (b) (3) Single-device operation (4) Single-device value at dual operation (4) (1) (2) (3) −0.1 −0.1 −1 −10 −100 −1 −10 −100 10 ms* ID max (pulsed)* VDSS max 1 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature |
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