TPCF8303

2006-11-16

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

TPCF8303

Notebook PC Applications

Portable Equipment Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−20

V

−20

V

Gate-source voltage

±8

V

DC

(Note 1)

−3.0

Drain current

Pulse

(Note 1)

−12

A

Single-device operation

(Note 3a)

1.35

Drain power

dissipation

(t

= 5 s) (Note 2a) Single-device value at

dual operation (Note 3b)

1.12

Single-device operation

(Note 3a)

0.53

Drain power

dissipation

(t

= 5 s) (Note 2b) Single-device value at

dual operation (Note 3b)

0.33

W

Single pulse avalanche energy

(Note 4)

0.58

mJ

Avalanche current

−1.5

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

0.11

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),

please refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3U1B

Weight: 0.011 g (typ.)

Circuit Configuration

1

2

3

4

8

7

6

5