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TPCP8603 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TPCP8603 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() TPCP8603 2006-11-13 2 Figure 1. Circuit Configuration Figure 2. Marking (Note4) Note 4: on the lower left of the marking indicates Pin 1. Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = −120 V, IE = 0 ⎯ ⎯ −100 nA Emitter cutoff current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −120 ⎯ ⎯ V hFE(1) VCE = −2 V, IC = −0.1 A 120 ⎯ 300 DC current gain hFE(2) VCE = −2 V, IC = −0.3 A 60 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −0.3 A, IB = −0.01 A ⎯ ⎯ −0.2 V Base-emitter saturation voltage VBE (sat) IC = −0.3 A, IB = −0.01 A ⎯ ⎯ −1.1 V Storage time tr ⎯ 130 ⎯ Storage time tstg ⎯ 650 ⎯ Switching time Fall time tf See Figure 3 circuit diagram. VCC ≅ 72 V, RL = 240 Ω −IB1 = IB2 = −10 mA ⎯ 120 ⎯ ns Figure 3. Switching Time Test Circuit & Timing Chart Duty cycle < 1 % 1 2 3 4 8 7 6 5 * Type 8603 8 7 6 5 1 2 3 4 Lot No. Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (the last digit of the calendar year) * Weekly code (three digits): IB1 20 μs IB2 IB1 IB2 IN OUT VCC |
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