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Axelite Confidential Materials, do not copy or distribute without written consent.

Rev.1.6 Sep.20, 2019

AX1250ES



ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Characteristics

Symbol

Rating

Unit

VIN Supply Voltage

VIN

6

V

Control Voltage

VCNTL

6

V

Power Dissipation

PD

Internally Limited

W

Storage Temperature Range

TST

-65 to +150

°C

Thermal Resistance from Junction to case

θJC

15

°C/W

Thermal Resistance from Junction to ambient

θJA

40

°C/W

Note: θJA is measured with the PCB copper area (need connect to Exposed pad) of approximately 1.5 in2

(Multi-layer).



OPERATING RATTING

Parameter

Symbol

Value

Unit

Input Voltage

VIN

1.3 to VCNTL

V

Control Voltage

VCNTL

5 or 3.3

V

Ambient Temperature

TA

-40 to +85

°C

Junction Temperature

TJ

-40 to +125

°C

Note: VOS offset is the voltage measurement defined as VOUT subtracted from VREFEN.



ELECTRICAL CHARACTERISTICS

VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), TA=25ºC, unless otherwise

specified

Characteristics

Symbol

Conditions

Min Typ Max Units

Gate Drive Voltage Range

VCNTL

- 3.3 5.5

V

POR Threshold

VCNTLRTH

- 2.5

-

V

POR Hysteresis

VCNTL

- 0.1

-

V

Input Voltage

VIN

1.3 - VCNTL

V

Quiescent Current

ICNTL IOUT=0A

-

1

3

mA

Standby Current

ISTBY IOUT=0A, VREFEN=0V

-

1

10

μA

Output Offset Voltage (Note1)

VOS

IOUT=0A

-10 -

+10 mV

Load Regulation (Note2)

△VLOAD IOUT=±2.0A

- 0.5 ±2

%

Shutdown Threshold

VIH

Enable, REFEN Rising

0.7 -

-

V

VIL

Shutdown, REFEN

Falling

-

-

0.2

V

Current Limit

ICL-Source Sourcing

2.2 -

-

A

ICL-Sink Sinking

2.2 -

-

A

Soft-Start Period

TSS

VOUT=1.25V

- 1.5

-

mS

Thermal Shutdown

TSD

- 160

-

°C

Thermal Shutdown Hysterisis

TSDH

-

30

-

°C

Note 1: VOS offset is the voltage measurement defined as VOUT subtracted from VREFEN.

Note 2: Regulation is measured at constant junction temperature by using a 5ms current pulse. Devices are

tested for load regulation in the load range from 0A to 2A.