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2SC3405 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC3405 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SC3405 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 800 V, IE = 0 ― ― 100 μA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 1 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 900 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 800 ― ― V VCE = 5 V, IC = 1 mA 6 ― ― DC current gain hFE VCE = 5 V, IC = 0.3 A 10 ― ― Collector-emitter saturation voltage VCE (sat) IC = 0.3 A, IB = 0.06 A ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 0.3 A, IB = 0.06 A ― ― 1.2 V Rise time tr ― ― 1.0 Storage time tstg ― ― 4.0 Switching time Fall time tf IB1 = −IB2 = 0.06 A, DUTY CYCLE ≤ 1% ― ― 1.0 μs Marking C3405 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) 20 μs INPUT IB1 IB2 OUTPUT VCC ≈ 400 V IB2 |
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