2SC4215

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC4215

High Frequency Amplifier Applications

FM, RF, MIX, IF Amplifier Applications

• Low noise figure: NF = 2dB (typ.) (f = 100 MHz)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

40

V

Collector-emitter voltage

30

V

Emitter-base voltage

4

V

Collector current

20

mA

Base current

4

mA

Collector power dissipation

100

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

0.1

μA

Emitter cut-off current

⎯

⎯

0.5

μA

DC current gain

(Note)

40

⎯

200

Reverse transfer capacitance

⎯

0.55

⎯

pF

Transition frequency

260

550

⎯

MHz

Collector-base time constant

⎯

⎯

25

ps

Noise figure

NF

⎯

2

5.0

dB

Power gain

Figure 1

17

23

⎯

dB

Unit: mm

JEDEC

―

JEITA

SC-70

TOSHIBA

2-2E1A

Weight: 0.006 g (typ.)