2SC4250

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC4250

TV VHF Mixer Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

30

V

Collector-emitter voltage

20

V

Emitter-base voltage

3

V

Collector current

50

mA

Base current

25

mA

Collector power dissipation

100

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

100

nA

Emitter cut-off current

⎯

⎯

1000

nA

Collector-emitter breakdown voltage

20

⎯

⎯

V

DC current gain

40

150

300

Reverse transfer capacitance

⎯

0.45

0.6

pF

Transition frequency

900

1400

⎯

MHz

Conversion gain

20

25

⎯

dB

Noise figure

NF

(Figure 1)

⎯

4.3

6

dB

Unit: mm

JEDEC

―

JEITA

SC-70

TOSHIBA

2-2E1A

Weight: 0.006 g (typ.)