1SS360

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS360

Ultra High Speed Switching Application

Small package

Low forward voltage

Small total capacitance

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

85

V

Reverse voltage

80

V

Maximum (peak) forward current

300 *

mA

Average forward current

100 *

mA

Surge current (10ms)

2 *

A

Power dissipation

P

100

mW

Junction temperature

125

°C

Storage temperature

−55

∼125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Unit rating. Total rating = unit rating × 1.5

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.61

―

―

―

0.74

―

Forward voltage

―

―

0.92

1.20

V

―

―

―

0.1

Reverse current

―

―

―

0.5

μA

Total capacitance

―

―

2.2

4.0

pF

Reverse recovery time

―

―

1.6

4.0

ns

Marking

JEDEC

―

EIAJ

TOSHIBA

1-2S1A

Weight: 2.4mg

Unit: mm