2SC5087R

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5087R

VHF~UHF Band Low Noise Amplifier Applications

• Low noise figure, high gain.

Characteristic

Symbol

Rating

Unit

Collector-base voltage

20

V

Collector-emitter voltage

12

V

Emitter-base voltage

3

V

Base current

40

mA

Collector current

80

mA

Collector power dissipation

150

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristic

Symbol

Condition

Min

Typ.

Max

Unit

Transition frequency

6

8

⎯

GHz

⎯

12.5

⎯

Insertion gain

11

13.5

⎯

Noise figure

NF

⎯

1.1

2

dB

Characteristic

Symbol

Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

1

μA

Emitter cut-off current

⎯

⎯

1

μA

DC current gain

120

⎯

240

⎯

Output capacitance

⎯

1.1

1.6

pF

Reverse transfer capacitance

⎯

0.65

1

pF

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

―

Weight: 0.012 g (typ.)

1.Base(B)

2.Emitter1(E1)

3.Collector(C)

4.Emitter(E2)

SMQ