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2SC5376F Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SC5376F
Description  Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5376F Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC5376F
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 15 V, IE = 0
⎯
⎯
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
⎯
⎯
0.1
μA
DC current gain
hFE
(Note)
VCE = 2 V, IC = 10 mA
300
⎯
1000
VCE (sat) (1) IC = 10 mA, IB = 0.5 mA
⎯
15
30
mV
Collector-emitter saturation voltage
VCE (sat) (2) IC = 200 mA, IB = 10 mA
⎯
110
250
mV
Base-emitter voltage
VBE (sat)
IC = 200 mA, IB = 10 mA
⎯
0.87
1.2
V
Transition frequency
fT
VCE = 2 V, IC = 10 mA
80
130
⎯
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
⎯
4.2
⎯
pF
Collector-emitter on resistance
Ron
IB = 1 mA, Vin = 1 Vrms, f = 1 kHz
⎯
0.9
⎯
Ω
Turn-on time
ton
⎯
85
⎯
ns
Storage time
tstg
⎯
170
⎯
ns
Switching time
Falll time
tf
⎯
40
⎯
ns
Note: hFE Classification
A: 300 to 600, B: 500 to 1000
OUTPUT
300
Ω
VCC = 6 V
VBB = −3 V
INPUT
0 V
10
μs
Duty Cycle <= 2%
IB1
= −IB2 = 5 mA



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