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2SC5439 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # 2SC5439
Description  Silicon NPN Triple Diffused Type Switching Regulator Applications
PDF  4 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5439 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SC5439
2006-11-10
3
Collector current IC (A)
VCE (sat) – IC
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
hFE – IC
Base-emitter voltage VBE (V)
IC – VBE
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
VBE (sat) – IC
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.01
1
0.03
0.1
0.3
1
3
10
30
3
10
30
100
300
1000
3000
IC max (pulsed)*
10 ms*
1 ms*
100 μs*
VCEO max
IC max
(continuous)
DC operation
Tc = 25°C
10 μs*
100 ms*
0
Common emitter
VCE = 5 V
0
2
4
6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
8
Tc = 100°C
25
−55
Tc = 100°C
25
−55
Common emitter
IC/IB = 5
0.05
0.001
0.1
0.3
0.5
1
3
5
10
0.003
0.01
0.03
0.1
0.3
1
3
10
Common emitter
VCE = 5 V
0.5
0.001
1
3
5
10
30
50
100
300
500
0.003
0.01
0.03
0.1
0.3
1
3
10
Tc = 100°C
25
−55
0.01
0.001
Common emitter
IC/IB = 5
0.03
0.1
0.3
1
3
10
0.003
0.01
0.03
0.1
0.3
1
3
10
Tc = 100°C
25
−55
1800
0
0
600
IB = 50 mA
Common emitter
Tc = 25°C
1600
800
200
400
300
2
4
6
8
10
2
4
6
8
10
12
1400
1200
1000
100



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