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2SC2500 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC2500 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SC2500 2006-11-09 3 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Ambient temperature Ta (°C) PC – Ta Safe Operating Area Collector-emitter voltage VCE (V) 0.1 Common emitter VCE = 1 V 20 50 100 500 0.3 3 −25 25 Ta = 100°C 1 0.05 300 0.02 0.05 0.1 0.5 0.3 Common emitter IC/IB = 40 0.1 0.3 3 5 1 0.5 −25 25 Ta = 100°C 0 0 Common emitter Ta = 25°C 5 3 4 5 6 7 30 10 50 40 IB = 5 mA 0 20 3 1 1 2 4 2 0 0 200 400 600 800 1000 20 40 60 80 100 120 160 140 IC max (pulsed)** *: Single nonrepetitive pulse Ta = 25°C **: Pulse width ≤ 10 ms Duty cycle ≤ 30% Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) DC operation (Ta = 25°C) 10 ms* 100 ms* 0.3 1 10 0.05 0.3 0.1 1 3 0.5 3 5 Common emitter VCE = 1 V 0 0.6 0.8 1.2 Ta = 100°C 25 1.4 1.0 0.2 0.4 0 −25 5 3 1 2 4 |
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