2SC6061

2006-11-13

1

1.6-0.1

2.8-0.3

3

2

1

+0.2

+0.2

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6061

High-Speed Switching Applications

DC-DC Converter Applications

・

・

・

Characteristic

Symbol

Rating

Unit

Collector-base voltage

180

V

Collector-emitter voltage

150

V

Collector-emitter voltage

120

V

Emitter-base voltage

7

V

DC

1.0

A

Collector current (Note 1)

Pulse

2.0

A

Base current

0.1

A

t = 10s

1000

mW

Collector power

dissipation (Note 2)

DC

625

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3S1A

Weight: 0.01g (Typ.)

1. Base

2. Emitter

3. Collector