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2SD2012 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SD2012 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 5 page ![]() 2SD2012 2006-11-21 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Base-emitter voltage VBE (V) IC – VBE 1000 0.01 10 30 50 100 300 500 0.03 0.05 0.1 0.3 0.5 1 3 Common emitter VCE = 5 V −25 Tc = 100°C 25 −25 1 0.01 0.01 0.1 0.3 0.5 0.03 0.05 0.03 0.05 0.1 0.3 0.5 1 3 5 Common emitter IC/IB = 10 Tc = 100°C 25 3.0 0 0 2.5 2.0 1.5 1.0 0.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Common emitter VCE = 5 V −25 Tc = 100°C 25 3.0 0 0 Common emitter Tc = 25°C 2.5 2.0 1.5 1.0 0.5 1 2 3 4 5 6 7 80 70 60 50 40 30 20 100 90 IB = 10 mA |
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