2SK2953_06 datasheet(2/6 Pages) TOSHIBA

2 / 6 page

2SK2953

2006-11-08

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±25 V, VDS = 0 V

—

±10

μA

Gate−source breakdown voltage

V (BR) GSS

IG = ±10 μA, VDS = 0 V

±30

—

Drain cut−off current

IDSS

VDS = 600 V, VGS = 0 V

—

100

μA

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

600

—

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.0

—

4.0

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 8.0 A

—

0.31

0.4

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 8.0 A

8.0

15.0

—

Input capacitance

Ciss

—

3520

—

Reverse transfer capacitance

Crss

—

Output capacitance

Coss

VDS = 25 V, VGS = 0 V, f = 1 MHz

—

300

—

Rise time

—

Turn−on time

ton

—

100

—

Fall time

—

Switching time

Turn−off time

toff

—

325

—

Total gate charge (gate−source

plus gate−drain)

—

Gate−source charge

Qgs

—

Gate−drain (“miller”) Charge

Qgd

VDD ≈ 400 V, VGS = 10 V, ID = 15 A

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

Pulse drain reverse current

(Note 1)

IDRP

—

Forward voltage (diode)

VDSF

IDR = 15 A, VGS = 0 V

—

−1.7

Reverse recovery time

trr

—

620

—

Reverse recovery charge

Qrr

IDR = 15 A, VGS = 0 V

dIDR / dt = 100 A / μs

—

7.5

—

μC

Marking

K2953

TOSHIBA

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

2SK2953 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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