TMP86FM25F datasheet(21/53 Pages) TOSHIBA

21 / 53 page

TMP86FM25

2004-03-01

86FM25-20

Under development

1.2.6.1

FLASH Writing Program in the RAM Area

To develop the program in RAM, the write control program should be loaded from

external device by using RAM loader mode in Serial PROM mode. Given below is an

example of writing the control program in the RAM area.

(1) Example of writing program in the RAM area

1. Monitor the EEPSR<EWUPEN>. If it is “0”, set the EEPCR<MNPWDW> to

“1”, and then start and keep polling until the EEPSR<EWUPEN> becomes

“1”.

2. Clear the interrupt master enable flag (IMF

← “0”).

3. Set the EEPCR with “3BH” (to enable a write to the FLASH).

4. Execute a write instruction for 64 bytes to the FLASH area.

5. Start and keep polling by software until the EEPSR<BFBUSY> becomes “0”.

(Upon completion of an erase and write to the FLASH cells, the

EEPSR<BFBUSY> is set to “1”. For the FLASH product, the required write

time is typically 4 ms. For the emulation chip, it is the value specified in the

EEPEVA register.)

6. Set the EEPCR with “CBH” (to disable a write to the FLASH).

Note:

See (2), “Method of specifying an address for a write to the FLASH”, for a

description about the FLASH address to be specified at step 4 above.

TMP86FM25F Datasheet(PDF) 21 Page - Toshiba Semiconductor