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MP4025 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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MP4025 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 3 page ![]() MP4025 2006-10-27 2 Marking Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance from junction to ambient (4-device operation, Ta = 25°C) ΣRth (j-a) 31.3 °C/W Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 45 V, IE = 0 ⎯ ⎯ 10 μA Collector cut-off current ICEO VCE = 45 V, IB = 0 ⎯ ⎯ 10 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 0.46 ⎯ 1.25 mA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 60 70 V Resistance RB ⎯ 2.5 3.6 4.7 k Ω DC current gain hFE VCE = 2 V, IC = 0.7 A 2000 ⎯ ⎯ ⎯ VCE (sat) (1) IC = 0.5 A, VBH = 4.2 V ⎯ ⎯ 1.2 Collector-emitter saturation voltage VCE (sat) (2) IC = 0.7 A, VBH = 9 V ⎯ ⎯ 1.5 V Input voltage (low) VBL VCE = 30 V, IC = 100 μA ⎯ ⎯ 0.7 V Turn-on time ton ⎯ 0.3 ⎯ Storage time tstg ⎯ 4.0 ⎯ Switching time Fall time tf ⎯ 0.6 ⎯ μs Input VCC ∼− 24 V Duty cycle <= 1% 0 20 μs VBH = 5 V MP4025 JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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