** Drain current is limited by junction temperature

416***

360**

80

HY1908

2

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (TC=25°C Unless Otherwise Noted)

VDSS

Drain-Source Voltage

80

VGSS

Gate-Source Voltage

±25

V

TJ

Maximum Junction Temperature

175

°C

TSTG

Storage Temperature Range

-55 to 175

°C

IS

Diode Continuous Forward Current

TC=25°C

90

A

Mounted on Large Heat Sink

IDM

Pulsed Drain Current *

A

TC=25°C

90

ID

Continuous Drain Current

TC=100°C

64

A

TC=25°C

185

PD

Maximum Power Dissipation

TC=100°C

92

W

RθJC

Thermal Resistance-Junction to Case

0.81

RθJA

Thermal Resistance-Junction to Ambient

62.5

°C/W

Avalanche Ratings

EAS

Avalanche Energy, Single Pulsed

L=0.5mH

mJ

Note：

Electrical Characteristics (T

C = 25°C Unless Otherwise Noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

-

V

VDS=80V, VGS=0V

-

-

1

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

-

-

10

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

2

3

4

V

IGSS

Gate Leakage Current

VGS=±25V, VDS=0V

-

-

±100

nA

RDS(ON)

Drain-Source On-state Resistance

VGS=10V, IDS=45A

-

7.0

9.0

m

Ω

Diode Characteristics

VSD

Diode Forward Voltage

ISD=45A, VGS=0V

-

0.8

1

V

trr

Reverse Recovery Time

-

60

-

ns

Qrr

Reverse Recovery Charge

ISD=45A, dlSD/dt=100A/

µs

-

125

-

nC

-

*** VD=64V

* Repetitive rating ; pulse width limiited by junction temperature

*

*

HY1908P/M/B/PS/PM/MF

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