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HY1908PS Datasheet(PDF) 3 Page - HOOYI SEMICONDUCTOR

Part # HY1908PS
Description  N-Channel Enhancement Mode MOSFET
PDF  15 Pages
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Manufacturer  HOOYI [HOOYI SEMICONDUCTOR]
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Logo HOOYI - HOOYI SEMICONDUCTOR

HY1908PS Datasheet(HTML) 3 Page - HOOYI SEMICONDUCTOR

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Electrical Characteristics (Cont.) (T
C = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
3.0
-
Ω
Ciss
Input Capacitance
-
3800
-
Coss
Output Capacitance
-
389
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
Frequency=1.0MHz
-
250
-
pF
td(ON)
Turn-on Delay Time
-
25
45
Tr
Turn-on Rise Time
-
td(OFF)
Turn-off Delay Time
-
62
100
Tf
Turn-off Fall Time
VDD=40V, RG = 6
Ω,
IDS =45A, VGS=10V,
-
19
30
ns
Gate Charge Characteristics
Qg
Total Gate Charge
-
86
Qgs
Gate-Source Charge
-
16
-
Qgd
Gate-Drain Charge
VDS=64V, VGS=10V,
IDS=45A
-
28
-
nC
Note * : Pulse test ; pulse width
≤300
µs, duty cycle≤2%.
.
-
HY1908P/M/B/PS/PM/MF
HY1908
www.hooyi.cc



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