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MT3S06FS Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # MT3S06FS
Description  VHF~UHF Band Low-Noise Amplifier Applications
PDF  3 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MT3S06FS Datasheet(HTML) 2 Page - Toshiba Semiconductor

  MT3S06FS Datasheet HTML 1Page - Toshiba Semiconductor MT3S06FS Datasheet HTML 2Page - Toshiba Semiconductor MT3S06FS Datasheet HTML 3Page - Toshiba Semiconductor  
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MT3S06FS
2007-11-01
2
Microwave Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 3 V, IC = 5 mA
7
10
⎯
GHz
⎪S21e⎪
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
⎯
8.5
⎯
Insertion gain
⎪S21e⎪
2 (2)
VCE = 3 V, IC = 7 mA, f = 2 GHz
7
9.5
⎯
dB
Noise figure
NF (1)
VCE = 1 V, IC = 3 mA, f = 2 GHz
⎯
1.7
3
dB
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 5 V, IE = 0
⎯
⎯
0.1
μA
Emitter cutoff current
IEBO
VEB = 1 V, IC = 0
⎯
⎯
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
⎯
140
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz(Note)
⎯
0.25
0.5
pF
Note: Cre is measured with a three-terminal method using a capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.



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