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IXDN55N120D1 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IXDN55N120D1
Description  IGBT
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXDN55N120D1 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISGM2175
eq IXDN55N120D1
IGBT
www.iscsemi.com
1
DESCRIPTION
· Low switching losses
· High short circuit capability
· Optional ultra fast diode
APPLICATIONS
· Space savings
· Easy to mount with 2 screws
· High power density
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1200
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
100
A
IC
Collector Current-Continuous
@ TC=90℃
62
A
ICM
Pulsed Collector Current@ TC=90℃
124
A
IF
Diode Forward Current
@ TC=25℃
110
A
IF
Diode Forward Current
@ TC=90℃
60
A
PD
Power Dissipation
IGBT@TC=25℃
450
W
PD
Power Dissipation Diode @TC=25℃
220
W
Tj
Operating Junction Temperature
-40~150
℃
Tstg
Storage Temperature Range
-40~150
℃
VISOL
Isolation Voltage t = 1min
2500
V~
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal Resistance,Junction to Case
IGBT
0.28
℃
/W
Rth j-c
Thermal Resistance,Junction to Case
Diode
0.6
℃
/W


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