2SK4033 datasheet(2/6 Pages) TOSHIBA

2 / 6 page

2SK4033

2006-11-20

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

μA

Drain cutoff current

IDSS

VDS = 60 V, VGS = 0 V

—

100

μA

Drain−source breakdown

voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

—

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

—

2.5

VGS = 4 V, ID = 2.5 A

—

0.09

0.15

Drain−source ON-resistance

RDS (ON)

VGS = 10 V, ID = 2.5 A

—

0.07

0.10

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.5 A

3.0

6.0

—

Input capacitance

Ciss

—

730

—

Reverse transfer capacitance

Crss

—

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

—

Rise time

—

Turn−on time

ton

—

Fall time

—

Switching time

Turn−off time

toff

—

Total gate charge (gate−source

plus gate−drain)

—

Gate−source charge

Qgs

—

Gate−drain (“Miller”) charge

Qgd

VDD ≈ 48 V, VGS = 10 V, ID = 5 A

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

Pulse drain reverse current

(Note 1)

IDRP

—

Forward voltage (diode)

VDSF

IDR = 5 A, VGS = 0 V

—

−1.7

Reverse recovery time

trr

—

Reverse recovery charge

Qrr

IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / μs

—

μC

Marking

K4033

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

2SK4033 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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