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CUS02 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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CUS02 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page ![]() CUS02 2006-11-13 1 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS02 Switching Mode Power Supply Applications Portable Equipment Battery Application • Forward voltage: VFM = 0.45 V@IF = 0.7 A • Average forward current: IF (AV) = 1.0 A • Repetitive peak reverse voltage: VRRM = 30 V • Suitable for compact assembly due to small surface-mount package “US−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF (AV) 1.0 (Note 1) A Peak one cycle surge forward current IFSM 20 (50 Hz) A Junction temperature Tj −40 to 150 °C Storage temperature range Tstg −40 to 150 °C Note 1: Ta = 52°C: Device mounted on a glass-epoxy board Board size: 50 mm × 50 mm, Land size: 6 mm × 6 mm Rectangular waveform (α = 180°), VR = 15 V Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit VFM (1) IFM = 0.1 A ― 0.35 ― VFM (2) IFM = 0.7 A ― 0.42 0.45 Peak forward voltage VFM (3) IFM = 1.0 A ― 0.47 ― V IRRM (1) VRRM = 5 V ― 0.7 ― Repetitive peak reverse current IRRM (2) VRRM = 30 V ― 10 100 μA Junction capacitance Cj VR = 10 V, f = 1.0 MHz ― 40 ― pF Device mounted on a ceramic board (soldering land: 2 mm × 2 mm) ― ― 75 Thermal resistance (junction to ambient) Rth (j-a) Device mounted on a glass-epoxy board (soldering land: 6 mm × 6 mm) ― ― 150 °C/W Thermal resistance (junction to lead) Rth (j-I) Junction to lead of cathode side ― ― 30 °C/W Unit: mm JEDEC ― JEITA TOSHIBA 3-2B1A Weight: 0.004 g (typ.) |
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