2SA1201 datasheet(3/4 Pages) TOSHIBA

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2SA1201

2006-11-09

Collector-emitter voltage VCE (V)

IC – VCE

Base-emitter voltage VBE (V)

IC – VBE

Safe Operating Area

Collector-emitter voltage VCE (V)

Collector current IC (mA)

hFE – IC

Collector current IC (mA)

VCE (sat) – IC

Ambient temperature Ta (°C)

PC – Ta

Common emitter

VCE = −5 V

−3

500

−30

−1000

−10

100

−100

−300

300

1000

Ta = 100°C

−25

−0.8

−0.4

−0.2

−0.4

−0.8

Common emitter

VCE = −5 V

−0.6

−0.2

−1.0

−1.2

Ta = 100°C

−25

−3

−0.1

−30

−300

−10

−0.05

Common emitter

IC/IB = 10

−0.01

−100

−0.3

−0.5

Ta = 100°C

−25

−0.03

−1000

−16

−8

−4

−400

−800

−600

−12

−200

IB = −1 mA

−10

−7

−5

−4

−3

−2

Common emitter

Ta = 25°C

*: Single nonrepetitive pulse

Ta = 25°C

Curves must be derated linearly

with increase in temperature.

Tested without a substrate.

−0.3

−1

−10

−1

−100

−300

−3

−30

−10

−100

−5

−50

IC max (pulse)*

IC max (continuous)

100 ms*

1 ms*

10 ms*

VCEO max

−30

−3

−300

−3000

−1000

−500

operation

Ta = 25°C

0.6

0.2

0.8

0.4

1.2

1.0

120

100

140

160

(1) Mounted on a ceramic

substrate (250 mm

2 × 0.8 t)

(2) No heat sink

(1)

(2)

2SA1201 Datasheet(PDF) 3 Page - Toshiba Semiconductor

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