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HN7G08FE Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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HN7G08FE Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page  HN7G08FE 2007-11-01 2 Q1 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Collector cutoff current ICBO ― VCB = −15 V, IE = 0 ― ― −100 nA Emitter cutoff current IEBO ― VEB =− 5 V, IC = 0 ― ― −100 nA DC current gain (Note) hFE ― VCE =− 2 V, IC =− 10 mA 300 ― 1000 VCE(sat) (1) ― IC =− 10 mA, IB =− 0.5 mA ― −15 −30 Collector-emitter saturation voltage VCE(sat) (2) ― IC =− 200 mA, IB =− 10 mA ― −110 −250 mV Base-emitter saturation voltage VBE(sat) ― IC =− 200 mA, IB =− 10 mA ― −0.87 −1.2 V Transition frequency fT ― VCE =− 2 V, IC =− 10 mA ― 130 ― MHz Collector output capacitance Cob ― VCB =− 10 V, IE = 0, f = 1 MHz ― 4.2 ― pF Turn-on time ton ― ⎯ 40 ⎯ Storage time tstg ― ⎯ 280 ⎯ Switching time Fall time tf ― IB1 = −IB2 = 5 mA ⎯ 65 ⎯ ns Note: hFE classification A(A): 300~600, B(B): 500~1000 ( ) marking symbol Q2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit ICBO ― VCB = 50 V, IE = 0 ― ― 100 Collector cutoff current ICEO ― VCE = 50 V, IB = 0 ― ― 500 nA Emitter cutoff current IEBO ― VEB = 5 V, IC = 0 0.074 ― 0.138 mA DC current gain hFE ― VCE = 5 V, IC = 10 mA 80 ― ― Collector-emitter saturation voltage VCE(sat) ― IC = 5 mA, IB = 0.25 mA ― 0.1 0.3 V Input voltage (ON) VI (ON) ― VCE = 0.2 V, IC = 5 mA 0.7 ― 1.3 V Input voltage (OFF) VI (OFF) ― VCE = 5 V, IC = 0.1 mA 0.5 ― 0.8 V Transition frequency fT ― VCE = 10 V, IC = 5 mA ― 250 ― MHz Collector output capacitance Cob ― VCB = 10 V, IE = 0, f = 1 MHz ― 3 ― pF Input resistor R1 ― ― 3.29 4.7 6.11 k Ω Resistor ratio R1/R2 ― ― 0.09 0.1 0.11 Marking Equivalent Circuit (Top View) 1 2 3 4 5 6 76A Type Name hFE Rank Q1 Q2 12 3 4 5 6 |
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