SSM3K12T datasheet(2/6 Pages) TOSHIBA

2 / 6 page

SSM3K12T

2007-11-01

Marking

Equivalent Circuit

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0

⎯

±1

μA

Drain-Source breakdown voltage

V (BR) DSS

ID = 1 mA, VGS = 0

⎯

Drain Cut-off current

IDSS

VDS = 30 V, VGS = 0

⎯

μA

Gate threshold voltage

Vth

VDS = 5 V, ID = 0.1 mA

1.1

⎯

1.8

Forward transfer admittance

|Yfs|

VDS = 5 V, ID = 1.5 A

(Note 3)

1.8

3.2

⎯

ID = 1.5 A, VGS = 10 V

(Note 3)

⎯

ID = 1.5 A, VGS = 4.5 V

(Note 3)

⎯

117

145

Drain-Source ON resistance

RDS (ON)

ID = 1.5 A, VGS = 4.0 V

(Note 3)

⎯

135

175

Total gate charge

VDD = 24 V, ID = 3 A, VGS = 4 V

⎯

2.6

⎯

Input capacitance

Ciss

VDS = 15 V, VGS = 0, f = 1 MHz

⎯

120

⎯

Reverse transfer capacitance

Crss

VDS = 15 V, VGS = 0, f = 1 MHz

⎯

Output capacitance

Coss

VDS = 15 V, VGS = 0, f = 1 MHz

⎯

Rise time

⎯

Turn-on time

ton

⎯

Fall time

⎯

3.6

⎯

Switching time

Turn-off time

toff

VDD = 15 V, ID = 1.5 A

VGS = 0~4 V, RG = 10 Ω

⎯

Note 3 : Pulse test

Switching Time Test Circuit

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for

this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires

lower voltage than Vth.

(relationship can be established as follows: VGS (off) < Vth < VGS (on) )

Please take this into consideration for using the device.

KDJ

(a) Test circuit

4 V

OUT

VDD

μs

VDD = 15 V

RG = 10 Ω

D.U. <= 1%

VIN: tr, tf < 5 ns

Common source

= 25°C

ton

toff

(b) VIN

4 V

VDD

VDS (ON)

10%

90%

10%

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