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2SB906 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SB906 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() 2SB906 2006-11-21 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −60 V, IE = 0 ― ― −100 μA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ― ― −100 μA Collector-emitter breakdown voltage V (BR) CEO IC = −50 mA, IB = 0 −60 ― ― V hFE (1) (Note) VCE = −5 V, IC = −0.5 A 60 ― 200 DC current gain hFE (2) VCE = −5 V, IC = −3 A 20 ― ― Collector-emitter saturation voltage VCE (sat) IC = −3 A, IB = −0.3 A ― −1.0 −1.7 V Base-emitter voltage VBE VCE = −5 V, IC = −0.5 A ― −1.0 −1.5 V Transition frequency fT VCE = −5 V, IC = −0.5 A ― 9 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 90 ― pF Turn-on time ton ― 0.4 ― Storage time tstg ― 1.7 ― Switching time Fall time tf −IB1 = IB2 = 0.2 A, DUTY CYCLE ≤ 1% ― 0.5 ― μs Note: hFE (1) classification O: 60 to 120, Y: 100 to 200 Marking B906 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) 20 μs INPUT IB1 IB2 OUTPUT VCC = −30 V IB2 |
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