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TLP561J Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP561J Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 6 page ![]() TLP561J 2002-09-25 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0, f = 1MHz ― 30 ― pF Peak off −state current IDRM VDRM = 600V ― 10 1000 nA Peak on −state voltage VTM ITM = 100mA ― 1.7 3.0 V Holding current IH ― ― 0.6 ― mA Critical rate of rise of off −state voltage dv / dt Vin = 240Vrms, Ta = 85°C (Fig.1) 200 500 ― V / μs Critical rate of rise of commutating voltage dv / dt(c) Vin = 60Vrms, IT = 15mA (Fig.1) ― 0.2 ― V / μs Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Trigger LED current IFT VT = 6V, RL = 100Ω ― 5 10 mA Inhibit voltage VIH IF = Rated IFT ― ― 50 V Leakage in inhibited state IIH IF = Rated IFT VT = Rated VDRM ― 200 600 μA Capacitance (input to output) CS VS = 0, f = 1MHz ― 0.8 ― pF Isolation resistance RS VS = 500V 5×10 10 10 14 ― Ω AC, 1 minute 2500 ― ― AC, 1 second, in oil ― 5000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 5000 ― Vdc Fig.1: dv / dt test circuit |
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