SSM3K7002F

2007-11-01

1

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

SSM3K7002F

High-Speed Switching Applications

Analog Switch Applications

• Small package

• Low ON-resistance

Characteristics

Symbol

Rating

Unit

Drain-source voltage

60

V

Gate-source voltage

± 20

V

DC

200

Drain current

Pulse

800

mA

Drain power dissipation (Ta

= 25°C)

200

mW

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Gate leakage current

⎯

⎯

± 10

μA

Drain-source breakdown voltage

60

⎯

⎯

V

Drain cutoff current

⎯

⎯

1

μA

Gate threshold voltage

1.0

⎯

2.5

V

Forward transfer admittance

170

⎯

⎯

mS

⎯

2.0

3.0

⎯

2.1

3.2

Drain-source ON-resistance

⎯

2.2

3.3

Ω

Input capacitance

⎯

17

⎯

pF

Reverse transfer capacitance

⎯

1.4

⎯

pF

Output capacitance

⎯

5.8

⎯

pF

Turn-on delay time

⎯

2.4

4.0

Switching time

Turn-off delay time

⎯

26

40

ns

Unit: mm

S-MINI

1

23

1.5-0.15

+0.25

2.5-0.3

+0.5

1.Gate

2.Source

3.Drain

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1F

Weight: 0.012 g (typ.)