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QIC0620003 Datasheet(PDF) 2 Page - Powerex Power Semiconductors

Part # QIC0620003
Description  Dual IGBT Common Emitter Module (200 Amp/600 Volts)
PDF  2 Pages
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

QIC0620003 Datasheet(HTML) 2 Page - Powerex Power Semiconductors

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Preliminary
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBT Common Emitter Module
200 Amp/600 Volts
QIC0620003
200 Amp/600 Volts
Maximum Ratings, Tj=25
°°°°C unless otherwise specified
Ratings
Symbol
QIC0620003
Units
Collector Emitter Voltage
VCES
600
Volts
Gate Emitter Voltage
VGES
±20
Volts
Collector Current
IC
200
Amperes
Peak Collector Current
ICM
400*
Amperes
Diode Forward Current
IF
50
Amperes
Diode Forward Surge Current
IFM
500
Amperes
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Mounting Torque, M6 Terminal Screws
-
40
In-lb
Mounting Torque, M6 Mounting Screws
-
40
In-lb
Module Weight (Typical)
-
200
Grams
V Isolation
VRMS
2500
Volts
*Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj=25
°°°°C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
ICES
VCE=VCES VGE=0V
-
-
1.0
mA
Gate Leakage Current
IGES
VGE=VGES VCE=0V
-
-
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC=20mA, VCE=10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC=200A, VGE=15V
-
2.1
2.8
Volts
IC=200A, VGE=15V,
Tj=150
°C
-
2.15
-
Volts
Total Gate Charge
QG
VCC=300V,
IC=200A, VGS=15V
-
600
-
nC
Diode Forward Voltage
VFM
IF=50A, VGS=0V
-
-
2.8
Volts
Dynamic Electrical Characteristics, Tj=25
°°°°C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Cies
-
-
20
nF
Output Capacitance
Coes
-
-
7
nF
Reverse Transfer Capacitance
Cres
VGE=0V
VCE=10V
f=1MHz
-
-
4
ns
Turn on Delay time
td(on)
-
-
200
ns
Rise Time
tr
-
-
550
ns
Turn- off Delay Time
td(off)
-
-
300
ns
Fall Time
tf
VCC=300V
IC=200A
VGE1=VGE2=15V
RG=3.1
Ω
-
-
300
ns
Diode Reverse Recovery Time
trr
-
-
110
ns
Diode Reverse Recovery Charge
Qrr
IF=50A
diF/dt=-100A/
µS
-
0.37
-
µC
Thermal and Mechanical Characteristics, Tj=25
°°°°C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
RθJC
Per IGBT
-
0.14
TBD
°C/W
Thermal Resistance, Junction to Case
RθJC
Per Diode
-
0.70
TBD
°C/W
Contact Thermal Resistance, Thermal Grease
Applied
RθCF
Per Module
-
-
0.075
°C/W



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