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QJD0240002 Datasheet(PDF) 2 Page - Powerex Power Semiconductors

Part # QJD0240002
Description  Dual Power MOSFET Module (400 Amperes/200 Volts)
PDF  2 Pages
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

QJD0240002 Datasheet(HTML) 2 Page - Powerex Power Semiconductors

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QJD0240002
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Dual Power MOSFET Module
400 Amperes/200 Volts
Preliminary
Page 2
7/10/2002
Maximum Ratings, Tj=25
°°°°C unless otherwise specified
Ratings
Symbol
QJD0240002
Units
Drain-source voltage, VGS=0V
VDSS
200
Volts
Gate-source voltage
VGSS
±20
Volts
Drain Current at Tc = 25
°C
ID
400
Amperes
Drain Current at Tc = 100
°C
ID
252
Amperes
Max Operating Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-40 to 125
°C
Mounting Torque, M6 Terminal Screws
-
40
In-lb
Mounting Torque, M6 Mounting Screws
-
40
In-lb
Module Weight (Typical)
-
400
Grams
V Isolation
VRMS
2000
Volts
Static Electrical Characteristics, Tj=25
°°°°C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Drain-source breakdown voltage
V(BR)DSS
ID=1mA, VGS=0V
200
-
-
Volts
Drain leakage current
IDSS
VDS=200V, VGS=0V
-
-
40
µA
Drain leakage current at Tc = 125
°C
IDSS
VDS=200V, VGS=0V
-
-
400
µA
Gate leakage current
IGSS
VGS=
±20V,VDS=0V
-
-
±400
nA
Gate-source threshold voltage
VGS(th)
ID=1mA, VDS=10V
3.0
4.0
5.0
Volts
Drain-source on state resistance
RDS(ON)
ID=200A, VGS=10V
-
5.5
6.0
m
Ω
Drain-source on-state voltage
VDS (ON)
ID=200A, VGS=10V
-
1.1
1.2
Volts
Forward On Voltage MOS Diode
VSD
ISD=400A, VGS=0V
-
-
1.6
Volts
Dynamic Electrical Characteristics, Tj=25
°°°°C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Ciss
-
31600
-
pF
Output Capacitance
Coss
-
6000
-
pF
Reverse Transfer Capacitance
Crss
VDS=25V
VGS=0V
f=1MHz
-
1840
-
pF
Turn on Delay time
td(on)
-
TBD
-
ns
Rise Time
tr
-
TBD
-
ns
Turn- off Delay Time
td(off)
-
TBD
-
ns
Fall Time
tf
VDD=100V
ID=200A
VGS=10V
RG=4.7
Ω
-
TBD
-
ns
Reverse Recovery Time MOS Diode
trr
-
225
-
ns
Reverse Recovery Charge MOS Diode
Qrr
-
5.4
-
µC
Reverse Recovery Current MOS Diode
IRRM
ISD=400A
di/dt=400A/µs
VDD=160V
Tj=150
°C
-
48
-
Amperes
Thermal Characteristics, Tj=25
°°°°C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Channel to Case
Rθ(ch-c)
Per Mosfet
-
0.08
TBD
°C/W
Contact Thermal Resistance
(Thermal Grease Applied)
RθCF
Per Module
-
0.020
-
°C/W



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