General Purpose Transistor

Comchip Technology CO., LTD.

REV:A

Page 2

QW-JTR174

Symbol

Parameter

Conditions

Min

Max

Unit

Electrical Characteristics (at TA=25°C unless otherwise noted)

Collector-base breakdown voltage

-100

IC = -0.1mA, IE = 0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

IC = -10mA, IB = 0

IE = -0.1mA, IC = 0

VCB = -50V, IE = 0

VEB = -5V, IC = 0

VCE = -2V, IC = -500mA

IC = -1A, IB = -50mA

IC = -1A, IB = -50mA

VCB = -10V, IE = 0, f = 1MHz

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

Cob

-50

-50

-5

-100

240

70

-0.5

-1.2

40

V

V

V

nA

nA

V

V

pF

Part No.

Range

2SA1213O-HF

70-140

120-240

2SA1213Y-HF

Classification Of hFE

Transition frequency

VCE = -2V, IC = -0.5A

fT

100

MHZ

VCE = -2V, IC = -2A

20

Typ

Typical Rating and Characteristic Curves (2SA1213-HF Series)

Fig.1 - Static Characteristic

Collector-Emitter Voltage, VCE (V)

-0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-0

-200

-400

-600

-800

-1000

Fig.2 - hFE ― IC

-1

-10

-100

-1000 -2000

10

100

1000

IB= -600µA

-1.2mA

-1.8mA

-2.4mA

-3mA

-3.6mA

-4.2mA

-4.8mA

-5.4mA

-6mA

Common emitter

Ta=25°C

Collector Current, IC (mA)

Common emitter

VCE= -2V

Ta=100°C

Ta=25°C