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IXYN100N120C3H1 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IXYN100N120C3H1
Description  IGBT
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXYN100N120C3H1 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISGM2187
eq IXYN100N120C3H1
IGBT
www.iscsemi.com
1
DESCRIPTION
· High Current Handling Capability
· Isolation Voltage 2500V~
· Optimized for Low Switching Losses
APPLICATIONS
· UPS
· Motor Drives
· SMPS
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1200
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
140
A
IC
Collector Current-Continuous
@ TC=110℃
60
A
ICM
Pulsed Collector Current@ TC=90℃
420
A
IF
Diode Forward Current
@ TC=110℃
49
A
PD
Power Dissipation
690
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
VISOL
Isolation Voltage t = 1min
2500
V~
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal Resistance,Junction to Case
IGBT
0.18
℃
/W
Rth j-c
Thermal Resistance,Junction to Case
Diode
0.52
℃
/W


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