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V1.0

15/04/20

Darlington Power Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Description

The is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration

and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and

switching applications.

Absolute Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-Base Voltage (Ie = 0)

Vcbo

80

V

Collector-Emitter Voltage (Ib = 0)

Vceo

Emitter-Base Voltage (Ic = 0)

Vebo

5

Collector Current

Ic

10

A

Base Current

Ib

0.2

Total Dissipation at Tc ≤25°C

Ptot

150

W

Storage Temperature

tstg

-65 to +200

°C

Maximum Operating Junction Temperature

Tj

200

Electrical Characteristics (Tcase = 25°C unless otherwise specified)

Parameter

Test Conditions

Symbol

Min.

Max.

Unit

Collector Cut-off Current (Rbe = 1kΩ)

Vce = 80V

Tcase = 150°C

Vce = 80V

Icer

-

-

1

5

μA

Collector Cut-off Current (Ib = 0)

Vce = 30V

Vce = 40V

Iceo

-

-

1

1

Emitter Cut-off Current (Ic = 0)

Veb = 5V

Iebo

-

2

-

Collector-Emitter Sustaining Voltage (Ib = 0)

Ic = 100mA

VCEO (sus)*

80

-

V

Collector-Emitter Saturation Voltage

Ic = 5A

Ib = 20mA

Ic = 10A

Ib = 50mA

Vce (sat)*

-

2

4

Base-Emitter Voltage

Ic = 5A Vce = 3V

Vbe*

-

3

DC Current Gain

Ic = 5A Vce = 3V

hfe*

1,000

-

-

*Pulsed : Pulse Duration = 300µs, Duty Cycle 1.5%

TO-3

Internal Schematic Diagram