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ADA4522-4ARZ-R7 Datasheet(PDF) 35 Page - Analog Devices |
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ADA4522-4ARZ-R7 Datasheet(HTML) 35 Page - Analog Devices |
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35 / 48 page ![]() Data Sheet ADA4522-1/ADA4522- 2/ADA4522-4 analog.com Rev I 35 of 48 Current Noise Density Figure 78 shows the current noise density of the ADA4522-1/ADA4522-2/ADA4522-4 at unity gain. At 1 kHz, the current noise density is about 1.3 pA/√Hz. The current noise density is determined by measuring the voltage noise due to current noise flowing through a resistor. Due to the low current noise density of the amplifier, the voltage noise is usually measured with a high value resistor; in this case, a 100 kΩ source resistor is used. However, the source resistor interacts with the input capacitance of the amplifier and board, causing the bandwidth to roll off. Note that Figure 78 shows the current noise density rolling off much earlier than the unity-gain bandwidth; this roll-off is expected. Figure 78.Current Noise Density at Gain = 1 EMI Rejection Ratio Circuit performance is often adversely affected by high frequency EMI. When the signal strength is low and transmission lines are long, an op amp must accurately amplify the input signals. However, all op amp pins—the noninverting input, inverting input, positive supply, negative supply, and output pins—are susceptible to EMI signals. These high frequency signals are coupled into an op amp by various means, such as conduction, near field radiation, or far field radiation. For example, wires and printed circuit board (PCB) traces can act as antennas and pick up high frequency EMI signals. Amplifiers do not amplify EMI or RF signals due to their relatively low bandwidth. However, due to the nonlinearities of the input devices, op amps can rectify these out of band signals. When these high frequency signals are rectified, they appear as a DC offset at the output. The ADA4522-1/ADA4522-2/ADA4522-4 have integrated EMI filters at their input stage. To describe the ability of the ADA4522-1/ADA4522-2/ADA4522-4 to perform as intended in the presence of electromagnetic energy, the electromagnetic interference rejection ratio (EMIRR) of the noninverting pin is specified in Table 2, Table 3, and Table 4 of the Specifications section. A mathematical method of measuring EMIRR is defined as follows: EMIRR = 20log(VIN_PEAK/ΔVOS) (5) 10 1 0.1 10 100 1k 10k 100k FREQUENCY (Hz) VSY = ±2.5V VSY = ±15V VSY = ±27.5V RS = 100kΩ AV = 1 |
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