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TLGE33TP Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # TLGE33TP
Description  Panel Circuit Indicators
PDF  3 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLGE33TP Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TLGE33TP(F)
2007-10-01
1
TOSHIBA InGaAℓP LED
TLGE33TP(F)
Panel Circuit Indicators
• Lead(Pb)-free products (lead: Sn-Ag-Cu)
• 2.5x5mm package
• InGaAℓP technology
• Transparent lens
• Excellent low current light output
• High intensity light emission
• Excellent low current light output
• Applications: dashboard displays, various indicator
• Stopper lead type is also available
Lineup
Product Name
Color
Material
TLGE33TP(F)
green
P
InGaAl
Absolute Maximum Ratings (Ta = 25°C)
Product Name
Forward Current
IF (mA)
Reverse Voltage
VR (V)
Power Dissipation
PD (mW)
Operating
Temperature
Topr (°C)
Storage
Temperature
Tstg (°C)
TLGE33TP(F)
50
4
120
−40~100
−40~120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical and Optical Characteristics (Ta = 25°C)
Typ. Emission Wavelength (Note)
Luminous Intensity
IV
(
Note)
Forward Voltage
VF
Reverse Current
IR
Product Name
λd
λP
Δλ
IF
Min
Typ.
IF
Typ.
Max
IF
Max
VR
TLGE33TP(F)
571
(574)
17
20
476
1300
20
2.0
2.4
20
50
4
Unit
nm
mA
mcd
mA
V
mA
μA
V
Note:Lamps are classified into the following ranks according to their luminous intensity. Each packing box includes single
Luminous Intensity class. IV 、R: 476-1290mcd, S: 850-2300mcd,T: 530mcd -、λd、1: 565-573nm, 2: 569-576nm
Precautions
Please be careful of the following:
• Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
• If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
• This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
Unit: mm
JEDEC
⎯
JEITA
⎯
TOSHIBA
4-5AG2
Weight: 0.23 g (Typ.)


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