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1N 5711

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION

Metal to silicon junction diode featuring high break-

down, low turn-on voltage and ultrafast switching.

Primarly intended for high level UHF/VHF detection

and pulse application with broad dynamic range.

Matched batches are available on request.

August 1999 Ed: 1A

DO 35

(Glass)

Symbol

Parameter

Value

Unit

Repetitive Peak Reverse Voltage

70

V

Forward Continuous Current*

°C

15

mA

Power Dissipation*

°C

430

mW

Storage and Junction Temperature Range

- 65 to 200

- 65 to 200

°C

Maximum Lead Temperature for Soldering during 10s at 4mm

from Case

230

°C

ABSOLUTE RATINGS (limiting values)

Symbol

Test Conditions

Value

Unit

Junction-ambient*

400

°C/W

THERMAL RESISTANCE

* On infinite heatsink with 4mm lead length

≤ 300µs δ < 2%.

Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

70

V

0.41

V

1

0.2

µA

STATIC CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

C

f = 1MHz

2pF

τ

Krakauer Method

100

ps

DYNAMIC CHARACTERISTICS

1/3