TLN115A(F)

2007-10-01

1

TOSHIBA Infrared LED GaAs Infrared Emitter

TLN115A(F)

Lead(Pb)-Free

Remote

−control Systems

• Wide half−angle value: θ1/2 = ±21° (typ.)

• Excellent radiant−intensity linearity. Modulation by pulse operation

and high frequency is possible.

• TPS703(F) pin photodiode with resin to screen out visible light

available as detector for remote control

Characteristic

Symbol

Rating

Unit

Forward current

100

mA

Forward current derating

(Ta > 25°C)

−1.33

mA / °C

Pulse forward current

(Note 1)

1

A

Reverse voltage

5

V

Power dissipation

150

mW

Operating temperature range

−20~75

°C

Storage temperature range

−30~85

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Note 1: Pulse width ≦ 100 μs, repetitive frequency = 100 Hz

Pin Connection

1. Anode

2. Cathode

12

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

—

1.35

1.5

V

Reverse current

—

—

10

μA

TLN115A (F)

15

26

—

Radiant intensity

TLN115A (B,F)

19

—

—

mW / sr

Radiant power

—

13

—

mW

Capacitance

—

20

—

pF

Peak emission wavelength

—

950

—

nm

Spectral line half width

Δλ

—

50

—

nm

Half value angle

θ

2

1

—

±21

—

°

Unit: mm

TOSHIBA

4−6B6

Weight: 0.3 g (typ.)