TLD26AH

– TLD82AH

Taiwan Semiconductor

2

Version: C2408

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

Part

number

Device

marking

Breakdown

voltage

VBR at IT

(V)

(Note 1)

Test

current

IT

(mA)

Working

stand-off

voltage

VWM

(V)

Maximum

blocking

leakage

current

IR at VWM

(µA)

(Note 1)

Maximum

VC at IPPM

tp =8/20 (

μs)

Maximum

VC at IPPM

tp =10/1000 (

μs)

Maximum

temp.

coefficient

of VBR

αT

(%/°C)

(Note 2)

Min

Typ Max

25°C 175°C

V

A

V

A

TLD26AH TLD26AH 24.4

26

27.0

1

22

1

100

42.0

1400

36.0

140

0.096

TLD28AH TLD28AH 26.7

28

29.5

1

24

1

100

45.0

1250

40.0

120

0.097

TLD30AH TLD30AH 28.9

30

31.9

1

27

1

100

49.0

1400

40.0

125

0.097

TLD33AH TLD33AH 31.1

33

34.3

1

28

1

100

56.0

1250

43.5

110

0.098

TLD35AH TLD35AH 33.3

35

36.9

1

30

1

100

60.0

1150

45.5

95

0.099

TLD39AH TLD39AH 36.7

39

40.5

1

33

1

100

66.0

1050

51.5

85

0.100

TLD42AH TLD42AH 40.0

42

44.2

1

36

1

100

71.0

1000

57.0

77

0.100

TLD47AH TLD47AH 44.4

47

49.0

1

40

1

100

76.5

950

63.0

65

0.101

TLD50AH TLD50AH 47.8

50

52.8

1

43

1

100

81.0

900

68.0

55

0.102

TLD56AH TLD56AH 53.3

56

58.9

1

48

1

100

90.0

770

76.0

48

0.103

TLD68AH TLD68AH 64.4

68

71.2

1

58

1

100

110.0

620

92.0

42

0.104

TLD82AH TLD82AH 77.8

82

86.0

1

70

1

100

135.0

550

113

35

0.105

Notes:

1.

Pulse test with PW = 30ms

2.

To calculate VBR vs. junction temperature, use the following formula:

VBR at TJ = VBR at 25 °C x (1 +

T x (TJ - 25))

ORDERING INFORMATION

ORDERING CODE(1)

PACKAGE

PACKING

TLDxAH

TO-263AB (D²PAK)

800 / Tape & Reel

Notes:

1.

"x" defines voltage from 26V (TLD26AH) to 82V (TLD82AH)