© TT electronics plc

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

NPN Phototransistor

OP804SL, OP805SL, OP830SL

OP800WSL, OP801WSL, OP802WSL, OP830WSL

Obsolete (OP800SL)

TT Electronics | OPTEK Technology

2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200

www.ttelectronics.com | sensors@ttelectronics.com

Rev C

05/2022

Page 4

Electrical Specifications

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

IC(ON)

(3)

On-State Collector Current

OP800SL

OP804SL

OP805SL

OP800WSL

OP801WSL

OP802WSL

0.5

7.0

15

0.3

0.5

2.5

-

-

-

-

-

-

-

22

-

3

2

3

mA

VCE = 5 V, EE = 2.5 mW/cm

2(2)(3)(4)

OP830SL

OP830WSL

15

4

-

-

-

-

VCE = 5 V, EE = 0.25 mW/cm

2(2)(3)(4)

ICEO

Collector Dark Current

OP800 (SL, WSL)

OP830 (SL, WSL)

-

-

-

-

100

1

nA

VCE = 10 V, EE = 0

V(BR)CEO

Collector-Emitter Breakdown Voltage

OP800 (SL, WSL)

OP830 (SL, WSL)

30

15

-

-

-

-

V

IC = 100 µA

V(BR)CBO

Collector-Base Breakdown Voltage

[applies to OP800SL only]

30

-

-

V

IC = 100 µA

V(BR)ECO

Emitter-Collector Breakdown Voltage

5.0

-

-

V

IE = 100 µA

V(BR)EBO

Emitter-Base Breakdown Voltage

[applies to OP800SL only]

5.0

-

-

V

IE = 100 µA

VCE(SAT)

(3)

Collector-Emitter Saturation Voltage

OP800WSL

OP800SL

OP830SL

OP830WSL

-

-

-

-

-

-

-

-

0.4

0.4

1.2

1.2

V

IC = .4 mA, EE = 2.5 mW/cm

2(4)

IC = 400 µA, EE = 2.5 mW/cm

2(4)

IC = 1 mA, EE = 0.25 mW/cm

2(4)

IC = 1.0 mA, EE = 0.25 mW/cm

2(4)

tr

Rise Time

-

7

-

µs

VCC = 5 V, IC = 0.80 mA,

RL = 100 Ω (See Test Circuit)

tf

Fall Time

-

7

-

µs

Notes:

1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum 20

grams force may be applied to the leads when soldering.

2. Derate linearly 2.5 mW/° C above 25° C.

3. Junction temperature maintained at 25° C.

4. Light source is an unfiltered tungsten bulb operating at CT = 2870 K or equivalent infrared source.