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CDCS504-Q1 Datasheet(PDF) 4 Page - Texas Instruments |
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CDCS504-Q1 Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 18 page ![]() 4 CDCS504-Q1 SCAS951 – APRIL 2017 www.ti.com Product Folder Links: CDCS504-Q1 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated 6.3 Recommended Operating Conditions MIN NOM MAX UNIT VDD Supply voltage 3 3.6 V fIN Input frequency FS = 0 2 27 MHz FS = 1 2 27 VIL Low-level input voltage LVCMOS 0.3 × VDD V VIH High-level input voltage LVCMOS 0.7 × VDD V VI Input voltage threshold LVCMOS 0.5 × VDD V CL Output load test LVCMOS 15 pF IOH/IOL Output current ±12 mA TA Operating free-air temperature –40 105 °C (1) The package thermal impedance is calculated in accordance with JESD 51 and JEDEC2S2P (high-k board). (2) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information over operating free-air temperature range (unless otherwise noted) (1) THERMAL METRIC(2) CDCS504-Q1 UNIT PW (TSSOP) 8 PINS RθJA Junction-to-ambient thermal resistance 179.9 °C/W High K Thermal Airflow (CFM) 0 149 Thermal Airflow (CFM) 150 142 Thermal Airflow (CFM) 250 138 Thermal Airflow (CFM) 500 132 Low K Thermal Airflow (CFM) 0 230 Thermal Airflow (CFM) 150 185 Thermal Airflow (CFM) 250 170 Thermal Airflow (CFM) 500 150 RθJC(top) Junction-to-case (top) thermal resistance 64.9 °C/W High K 65 Low K 69 RθJB Junction-to-board thermal resistance 108.7 °C/W ψJT Junction-to-top characterization parameter 9 °C/W ψJB Junction-to-board characterization parameter 107 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W 6.5 Electrical Characteristics – Device Characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDD Device supply current fin = 3.072 MHz; FS = 1 24 mA fOUT Output frequency FS = 0 2 27 MHz FS = 1 8 108 IIH LVCMOS input current VI = VDD; VDD = 3.6 V 10 μA IIL LVCMOS input current VI = 0 V; VDD = 3.6 V –10 μA VOH LVCMOS high-level output voltage IOH = -–0.1 mA 2.9 V IOH = -–8 mA 2.4 IOH = -–12 mA 2.2 |
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