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CDCS504-Q1 Datasheet(PDF) 4 Page - Texas Instruments

Part # CDCS504-Q1
Description  CDCS504-Q1 Clock Buffer and Clock Multiplier
PDF  18 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

CDCS504-Q1 Datasheet(HTML) 4 Page - Texas Instruments

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CDCS504-Q1
SCAS951 – APRIL 2017
www.ti.com
Product Folder Links: CDCS504-Q1
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
6.3 Recommended Operating Conditions
MIN
NOM
MAX
UNIT
VDD
Supply voltage
3
3.6
V
fIN
Input frequency
FS = 0
2
27
MHz
FS = 1
2
27
VIL
Low-level input voltage LVCMOS
0.3 × VDD
V
VIH
High-level input voltage LVCMOS
0.7 × VDD
V
VI
Input voltage threshold LVCMOS
0.5 × VDD
V
CL
Output load test LVCMOS
15
pF
IOH/IOL
Output current
±12
mA
TA
Operating free-air temperature
–40
105
°C
(1)
The package thermal impedance is calculated in accordance with JESD 51 and JEDEC2S2P (high-k board).
(2)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
over operating free-air temperature range (unless otherwise noted)
(1)
THERMAL METRIC(2)
CDCS504-Q1
UNIT
PW (TSSOP)
8 PINS
RθJA
Junction-to-ambient thermal
resistance
179.9
°C/W
High K
Thermal Airflow (CFM) 0
149
Thermal Airflow (CFM) 150
142
Thermal Airflow (CFM) 250
138
Thermal Airflow (CFM) 500
132
Low K
Thermal Airflow (CFM) 0
230
Thermal Airflow (CFM) 150
185
Thermal Airflow (CFM) 250
170
Thermal Airflow (CFM) 500
150
RθJC(top)
Junction-to-case (top) thermal
resistance
64.9
°C/W
High K
65
Low K
69
RθJB
Junction-to-board thermal resistance
108.7
°C/W
ψJT
Junction-to-top characterization parameter
9
°C/W
ψJB
Junction-to-board characterization parameter
107
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
°C/W
6.5 Electrical Characteristics – Device Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IDD
Device supply current
fin = 3.072 MHz; FS = 1
24
mA
fOUT
Output frequency
FS = 0
2
27
MHz
FS = 1
8
108
IIH
LVCMOS input current
VI = VDD; VDD = 3.6 V
10
μA
IIL
LVCMOS input current
VI = 0 V; VDD = 3.6 V
–10
μA
VOH
LVCMOS high-level output voltage
IOH = -–0.1 mA
2.9
V
IOH = -–8 mA
2.4
IOH = -–12 mA
2.2



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