INA163UASLASH2K5.A datasheet(6/16 Pages) TI2

6 / 16 page

INA163

SBOS177D

www.ti.com

APPLICATIONS INFORMATION

Figure 1 shows the basic connections required for

operation. Power supplies should be bypassed with

0.1

µF tantalum capacitors near the device pins. The

output Sense (pin 8) and output Reference (pin 10)

should be low-impedance connections. Resistance of

a few ohms in series with these connections will

degrade the common-mode rejection of the INA163.

GAIN-SET RESISTOR

Gain is set with an external resistor, RG, as shown in

Figure 1. The two internal 3k

Ω feedback resistors are

laser-trimmed to 3k

Ω within approximately ±0.2%. Gain

is:

6000

The temperature coefficient of the internal 3k

Ω resis-

tors is approximately

±25ppm/°C. Accuracy and TCR

of the external RG will also contribute to gain error and

FIGURE 1. Basic Circuit Connections.

temperature drift. These effects can be inferred from

the gain equation. Make a short, direct connection to

the gain set resistor, RG. Avoid running output signals

near these sensitive input nodes.

NOISE PERFORMANCE

The INA163 provides very low-noise with low-source

impedance. Its 1nV/

√Hz voltage noise delivers near-

theoretical noise performance with a source imped-

ance of 200

Ω. The input stage design used to achieve

this low noise, results in relatively high input bias

current and input bias current noise. As a result, the

INA163 may not provide the best noise performance

with a source impedance greater than 10k

Ω. For source

impedance greater than 10k

Ω, other instrumentation

amplifiers may provide improved noise performance.

Ω

Sense

111

Ω

−

IN+

V+

−

V+

−

INA163

G = 1 +

6000

Ω

Sometimes Shown in

Simplified Form:

NOTE: (1) NC = No Connection.

Ref

0.1

µF

0.1

µF

INA163

GAIN

(V/V)

(dB)

(

Ω )

(1)

6000

1500

667

316

122

100

200

500

1000

2000

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