1000

10000

100000

1000000

125

130

135

140

145

150

Continuous TJ (°C)

Electromigration Fail Mode

Wirebond Life

INA2134-EP

SBOS595C – MARCH 2012 – REVISED MARCH 2012

www.ti.com

ELECTRICAL CHARACTERISTICS (continued)

At TA = 25°C, VS = ±18 V, RL = 2 kΩ, and Ref pin connected to Ground (unless otherwise noted).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

GAIN

Initial

1

V/V

Error

VO = –16 V to 16 V

±0.02

±0.1

%

vs Temperature

VO = –16 V to 16 V, -55°C to 125°C

±2

±3.5

%

Nonlinearity

VO = –16 V to 16 V

0.0001

%

OUTPUT

Voltage output:

Positive

(V+) – 2

(V+) – 1.8

V

Negative

(V-) + 2

(V-) + 1.6

V

Positive

Specified temperature range

(V+) – 2.45

(V+) – 2.1

V

Negative

Specified temperature range

(V-) + 2.45

(V-) + 1.8

V

Current limit, continuous to common

±60

mA

Capacitive load (stable operation)

500

pF

POWER SUPPLY

Rated voltage

±18

V

Voltage range

±4

±18

V

IO = 0 A

±2.4

±2.9

mA

Quiescent current (per amplifier)

IO = 0 A, -55°C to 125°C

±2.7

±3.1

mA

TEMPERATURE RANGE

Specified temperature range

–55

125

°C

Operating temperature range

–55

125

°C

Storage temperature range

–65

150

°C

xxx

A.

See datasheet for absolute maximum and minimum recommended operating conditions.

B.

Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect

life).

C.

The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the

dominant failure mechanism affecting device wearout for the specific device process and design characterisitics.

Figure 1. INA2134 Electromigration Fail Mode/Wirebond Life Derating Chart

4

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