LED and Photosensor Pairs

OPS666, OPS667, OPS691, OPS692, OPS693,

OPS698

© TT electronics plc

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

TT Electronics | OPTEK Technology

2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200

www.ttelectronics.com | sensors@ttelectronics.com

Rev B 02/2020 Page 1

Description:

Each LED/Photosensor pair in the series consists of a gallium arsenide infrared emitting diode and a NPN silicon

phototransistor, mounted in a T-1 package (OPS666, OPS667) or in a matched lateral side-looking plastic package (OPS691,

OPS692, OPS693 and OPS698).

Matched pairs are desirable where the application is unique and the quantity required does not justify assembly tooling

costs. If separation between the LED and sensor is greater than two times the specified IC(ON) distance, proper alignment

becomes critical. Although sold as pairs, emitters and sensors are packaged separately for handling ease.

Please note that the sensor is sensitive to ambient light.

Applications:

• Non-contact reflective object sensor

• Assembly line automation

• Machine automation

• Machine safety

• End of travel sensor

• Door sensor

Features:

• High current transfer ratio

• Low-cost plastic package

• Lateral side-looking clear plastic package (OPS691, OPS692, OPS693 and

OPS698)

OPS666 - 667

OPS691 - 693

OPS698

Ordering Information

Part

Number

Output

Package

Style

Description

Lead

Length

OPS666

Transistor

T-1

Gallium arsenide infrared emitting diode (OP165)

NPN silicon phototransistor (OP505)

0.50” (`1.700 mm)

OPS667

Transistor

T-1

Gallium arsenide infrared emitting diode (OP165)

NPN silicon phototransistor (OP505)

0.50” (`1.700 mm)

OPS691

Transistor

Lateral

Side-looking

Gallium arsenide infrared emitting diode (OP140)

NPN silicon phototransistor (OP550)

0.50” (`1.700 mm)

OPS692

Transistor

Lateral

Side-looking

Gallium arsenide infrared emitting diode (OP140)

NPN silicon phototransistor (OP550)

0.50” (`1.700 mm)

OPS693

Transistor

Lateral

Side-looking

Gallium arsenide infrared emitting diode (OP140)

NPN silicon phototransistor (OP550)

0.50” (`1.700 mm)

OPS698

Transistor

Lateral

Side-looking

Gallium arsenide infrared emitting diode (OP145)

NPN silicon phototransistor (OP555)

0.50” (`1.700 mm)

RoHS